Competitive rate of energy loss mechanisms evidenced in high-field electron drift velocity in Si at 30 °K
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/BF02752519.pdf
Reference23 articles.
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1. On laser annealing and lattice melting;Physics Letters A;1980-09
2. Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis inn-Type Silicon;Physical Review B;1973-12-15
3. Electron energy relaxation time in Si and Ge;Journal of Physics and Chemistry of Solids;1973-01
4. On High-Electric-Field Conductivity inn- Type Silicon;Physical Review B;1971-02-15
5. Evidence of zero-point scattering in high-field transport properties of Si at low temperatures;Physics Letters A;1971-02
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