On the present understanding of Schottky contacts-Reference-Cited by-同舟云学术

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On the present understanding of Schottky contacts

Published:1986 Issue: Volume: Page:67-88
ISSN:0430-3393
Container-title:Festkörperprobleme 26
language:
Short-container-title:

Author:

Mönch Winfried

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/BFb0107792

Reference65 articles.

1. F. Braun, Pogg. Ann. 153, 556 (1874)

2. W. G. Adams and R. E. Day, Proc. Roy. Soc. 25, 113 (1876)

3. F. Braun, Sitzungsber. Naturforsch. Gesell. (Leipzig), p. 49 (1876)

4. L. D. Grondahl, U.S. Patent 1640335 issued Jan. 1, 1925

5. W. Schottky and W. Deutschmann, Phys. Z. 30, 839 (1929)

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1. Alkali Adatom-amplified Schottky contact and built-in voltage for stable Zn-metal anodes;Energy Storage Materials;2023-01

2. Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states;Journal of Materials Science: Materials in Electronics;2018-10-08

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4. On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts;Journal of Materials Science: Materials in Electronics;2015-10-22

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