Etch rate of low-temperature chemically vapour deposited SiO2 films in P-etch solution: the effect of deposition conditions
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/BF00723481.pdf
Reference11 articles.
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3. C. PAVELESCU, C. COBIANU, L. CONDRIUC and E. SEGAL,Thin Solid Films 114 (1984) 291.
4. W. KERN,Solid State Technol. 18 (1975) 25.
5. C. COBIANU and C. PAVELESCU,Rev. Roum. Chim. 28 (1983) 57.
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1. Wet chemical etching of silicate glasses in hydrofluoric acid based solutions;Journal of Materials Science;1993-12
2. A review of the chemical reaction mechanism and kinetics for hydrofluoric acid etching of silicon dioxide for surface micromachining applications;Thin Solid Films;1993-09
3. Determination of the Etching Kinetics for the Hydrofluoric Acid/Silicon Dioxide System;Journal of The Electrochemical Society;1993-08-01
4. Correlations between the properties and the deposition kinetics of low-temperature chemical vapour deposited SiO2 films: the effect of O2/SiH4 mole ratio;Journal of Materials Science Letters;1990-02
5. A mechanism for the surface reaction between silane and oxygen at low temperature and correlations with the properties of the deposited SiO2 films;Journal of Materials Science Letters;1988-10
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