Transfer-free graphene passivation of sub 100 nm thin Pt and Pt–Cu electrodes for memristive devices

Abstract

AbstractMemristive switches are among the most promising building blocks for future neuromorphic computing. These devices are based on a complex interplay of redox reactions on the nanoscale. Nanoionic phenomena enable non-linear and low-power resistance transition in ultra-short programming times. However, when not controlled, the same electrochemical reactions can result in device degradation and instability over time. Two-dimensional barriers have been suggested to precisely manipulate the nanoionic processes. But fabrication-friendly integration of these materials in memristive devices is challenging.Here we report on a novel process for graphene passivation of thin platinum and platinum/copper electrodes. We also studied the level of defects of graphene after deposition of selected oxides that are relevant for memristive switching.