Publisher
Springer Science and Business Media LLC
Subject
General Earth and Planetary Sciences,General Physics and Astronomy,General Engineering,General Environmental Science,General Materials Science,General Chemical Engineering
Reference21 articles.
1. Hamsa S, Ananth AG, Thangadurai N (2018) A study of semiconductor memory technology by comparing volatile and non-volatile memories. J Adv Res Dyn Control Syst 10(4):1252–1258
2. Islam A, Rajan NS, Dwivedi AK (2018) Compact design of an MTJ-based non-volatile CAM cell with read/write operations. Microsyst Technol 1:1–12
3. Worledge DC et al (2017) Theory of spin torque switching current for the double magnetic tunnel junction. IEEE Magn Lett 8:1
4. Huet G et al (2017) Low-current spin transfer torque MRAM. Nat Nanotechnol 10(3):187–191
5. Hu G et al (2015) MRAM with double magnetic tunnel junctions. In: IEEE International Electron Devices Meeting, pp 668–671
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献