Studies of Nonradiative Recombination in Insulators and Semiconductors via the Principle of Detailed Balance-Reference-Cited by-同舟云学术

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Studies of Nonradiative Recombination in Insulators and Semiconductors via the Principle of Detailed Balance

Published:1969 Issue: Volume: Page:122-132
ISSN:
Container-title:Electronic Structures in Solids
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Author:

Nelson D. F.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4899-6537-0_10

Reference12 articles.

1. D. F. Nelson and M. D. Sturge, Phys. Rev. 137, A1117 (1965).

2. A. C. G. Mitchell and M. W. Zemansky, Resonance Radiation and Excited Atoms (Cambridge University Press, Cambridge, England, 1934), p. 92.

3. W. Kuhn, Naturwiss. 14, 48 (1926)

4. M. W. Zemansky, A. Physik 72, 587 (1931).

5. R. Ladenberg and E. Thiele, Z. Physik 72, 697 (1931)

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1. Exciton-enhanced recombination in silicon at high concentrations of charge carriers;Semiconductor Physics, Quantum Electronics and Optoelectronics;2000-01-06

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