Ambipolar Perpendicular Transport in a Semiconductor Slab
Author:
Publisher
Springer US
Link
http://link.springer.com/content/pdf/10.1007/978-1-4899-3689-9_31
Reference6 articles.
1. Held, T., Kuhn, T., and Mahler, G., 1990, Transport of an optically generated electron-hole plasma in a semiconductor slab: Approach to stationarity, Phys. Rev. B, 41:5144.
2. Hillmer, H., Kuhn, T., Laurich, B., Forchel, A., and Mahler, G., 1987, Experimental and theoretical investigations of free exciton transport in Si, Physica Scripta, 35:520.
3. Kocevar, P., 1972, Non-ohmic transport and phonon amplification in polar semiconductors, J. Phys. C., 5:3349.
4. Kuhn, T., and Mahler, G., 1989, Importance of carrier-carrier scattering for the ambipolar transport of optically generated carriers in a thin semiconductor slab, Phys. Rev. B, 39:1194.
5. Shah, J., 1989, Photoexcited hot carriers: From cw to 6 fs in 20 years, Solid-State Electron., 32:1051.
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