3D Calculation of MOSFET Junction Temperature Based on the Finite Volume Method-Reference-Cited by-同舟云学术

3D Calculation of MOSFET Junction Temperature Based on the Finite Volume Method

Published:2022-10-19 Issue:1 Volume:47 Page:137-146
ISSN:2228-6179
Container-title:Iranian Journal of Science and Technology, Transactions of Electrical Engineering
language:en
Short-container-title:Iran J Sci Technol Trans Electr Eng

Author:

Tao Yibin,Yu Haojie,Yin Shi,Zhuang Jun,Li Guanjun,Gao Chaofei^ORCID

Funder

science and technology project of state grid

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Computer Vision and Pattern Recognition,Energy Engineering and Power Technology,Signal Processing

Link

https://link.springer.com/content/pdf/10.1007/s40998-022-00539-9.pdf

Reference17 articles.

1. Avenas Y, Dupont L, Khatir Z (2012) Temperature measurement of power semiconductor devices by thermo sensitive electrical parameters—a review. IEEE Trans Power Electron 27(6):3081–3092

2. Baker N, Liserre M, Dupont L et al (2014) Improved reliability of power modules: a review of online junction temperature measurement methods. IEEE Ind Electron Mag 8(3):17–27

3. Blackburn D L (2004) Temperature measurements of semiconductor devices—a review. In: Twentieth annual IEEE semiconductor thermal measurement and management symposium. IEEE, San Jose

4. Ceccarelli L, Luo H, Iannuzzo F (2018) Investigating SiC MOSFET body diode’s light emission as temperature-sensitive electrical parameter. Microelectron Reliab 88–90:627–630

5. Ceccarelli L, Kotecha RM, Bahman AS et al (2019) Mission-profile-based lifetime prediction for a SiC mosfet power module using a multi-step condition mapping simulation strategy. IEEE Trans Power Electron 34(10):9698–9708