Parameter Extraction Using the Output Characteristics of Thin-Film Transistors in Weak-Conduction and Triode-Region
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s42341-020-00268-y.pdf
Reference18 articles.
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2. A.C. De Oliveira, D. Cordova, H. Klimach, S.A. Bampi, 0.12-0.4 V, Versatile 3-transistor CMOS voltage reference for ultra-low power systems. IEEE Trans Circuit Syst. I 65(8465989), 3790–3799 (2018). https://doi.org/10.1109/tcsi.2018.2859341
3. J.V.T. Ferreira, C. Galup-Montoro, Ultra-low-voltage CMOS ring oscillators Electronics Letters 55, 523–525 (2019). https://doi.org/10.1049/el.2019.0281
4. R.J. Van Overstraeten, G.J. Declerck, A. Paul, Theory of the MOS transistor in weak inversion-new method to determine the number of surface states. IEEE Trans. Electron Devices 22, 282–288 (1975). https://doi.org/10.1109/T-ED.1975.18119
5. P.A. Muls, G.J. Declerck, R.J. Van Overstraeten, Characterization of the Mosfet Operating in Weak Inversion. Advances in Electronics and Electron Physics 47, 197–266 (1978). https://doi.org/10.1016/s0065-2539(08)60087-6
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