Percolation Induced Metal–Insulator Transition in 2D Si/SiGe Quantum Wells
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s42341-021-00364-7.pdf
Reference32 articles.
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2. S. Dlimi, L. Limouny, A El Kaaouachi (2021) Crossover between ballistic and diffusive regime in 2D SiGe quantum well. Appl. Surface Sci. Adv. 3, 100045 (2021)
3. E. Abrahams, P.W. Anderson, D.C. Licciardello et al., Scaling theory of localization: absence of quantum diffusion in two dimensions. Phys. Rev. Lett. 42, 623 (1979)
4. S.V. Kravchenko, G.V. Kravchenko, J.E. Furneaux et al., Possible metal-insulator transition at B=0 in two dimensions Phys. Rev. B Solid State. 50(11), 8039–8842 (1994)
5. S.V. Kravchenko, W.E. Masson, G.E. Bowker et al., Scaling of an anomalous metal-insulator transition in a two-dimensional system in silicon at B=0. Phys. Rev. B. 51, 7038 (1996)
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