The effect of trimethylaluminum concentration on the incorporation of P In AlxGa1−xPyAs1−y grown by organometallic vapor phase epitaxy-Reference-Cited by-同舟云学术

The effect of trimethylaluminum concentration on the incorporation of P In AlxGa1−xPyAs1−y grown by organometallic vapor phase epitaxy

Published:1982-01 Issue:1 Volume:11 Page:59-73
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Ludowise M. J.,Dietze W. T.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02654609.pdf

Reference12 articles.

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2. G. A. Rozgonyi and M. B. Panish, Appl. Phys. Lett.23, 533 (1973).

3. N. J. Nelson, K. K. Johnson, R. L. Moon, H. A. Vander Plas and L. W. James, Appl. Phys. Lett.33, 26 (1978).

4. R. D. Burnham, N. Holonyak, Jr., and D. R. Scifres, Appl. Phys. Lett.17, 455 (1970).

5. R. L. Moon, G. A. Antypas and Y. G. Chai,7th International Symp. GaAs and Related Compounds, St. Louis, 1978, ed. C. M. Wolfe, (Inst. of Phys., London, 1979), pp. 78–88.

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