Application of eddy current technique to vertical bridgman growth of CdZnTe-Reference-Cited by-同舟云学术

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Application of eddy current technique to vertical bridgman growth of CdZnTe

Published:1996-08 Issue:8 Volume:25 Page:1134-1138
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Shetty R.,Ard C. K.,Wallace J. P.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02654998.pdf

Reference10 articles.

1. V.M. Glazov, S.N. Chizhveskaya and N.N. Glagoleva,Liquid Semiconductors, (New York: Plenum Press, 1969).

2. D.L. Larkin, J. Kobayashi, B.S. Ashok, J.K. Tien and J.P. Wallace,Intelligent Processing of Materials, (Warrendale, PA: TMS, 1991).

3. G.J. Rosen, Ph.D. Thesis, Clarkson University, Potsdam, NY 1994.

4. R.M. Siegfried, Ph.D. Thesis, University of Minnesota, Minneapolis, MN 1983.

5. N.F. Mott,Ionic Liquids, Molten Salts and Polyelectrolytes, Lecture Notes in Physics No. 172, ed. K.H. Bennemann, F. Brouers and D. Quitmann, (Berlin: Springer-Verlag, 1982).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal Growth and Surfaces;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

2. Semiconductor materials for digital mammography;SPIE Proceedings;2000-04-25

3. Growth Rate Effects during Indium-Antimony Crystal Growth;Crystal Research and Technology;1999-03

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