Strain-induced effects on the optoelectronic properties of ZrSe2/HfSe2 heterostructures-Reference-Cited by-同舟云学术

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Strain-induced effects on the optoelectronic properties of ZrSe2/HfSe2 heterostructures

Published:2023-12-11 Issue:1 Volume:30 Page:
ISSN:1610-2940
Container-title:Journal of Molecular Modeling
language:en
Short-container-title:J Mol Model

Author:

Wei Xingbin,Yang Lu,Sun Shihang,Zhao Yanshen,Liu Huaidong

Publisher

Springer Science and Business Media LLC

Subject

Computational Theory and Mathematics,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Computer Science Applications,Catalysis

Link

https://link.springer.com/content/pdf/10.1007/s00894-023-05793-0.pdf

Reference50 articles.

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2. Geim AK, Novoselov KS (2007) The rise of graphene. Nat Mater 6:183–191

3. Wei L, Liu G-L, Fan D-Z, Zhang G-Y (2018) Density functional theory study on the electronic structure and optical properties of S absorbed graphene. Phys B Condens Matter 545:99–106

4. Coleman JN, Lotya M, O’Neill A, Bergin SD, King PJ, Khan U, Young K, Gaucher A, De S, Smith RJ (2011) Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science 331:568–571

5. Bafekry A, Faraji M, Karbasizadeh S, Sarsari IA, Jappor H, Ghergherehchi M, Gogova D (2021) Two-dimensional FeTe2 and predicted Janus FeXS (X: Te and Se) monolayers with intrinsic half-metallic character: tunable electronic and magnetic properties via strain and electric field. Phys Chem Chem Phys 23:24336–24343

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