First-principles study of the electronic structure and optical properties of C-doped SnS2-Reference-Cited by-同舟云学术

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First-principles study of the electronic structure and optical properties of C-doped SnS2

Published:2024-01-11 Issue:2 Volume:30 Page:
ISSN:1610-2940
Container-title:Journal of Molecular Modeling
language:en
Short-container-title:J Mol Model

Author:

Yang Nan,Wang Ying,Ji Jinghan,Shi Zhihong,Liu Guili,Zhang Guoying

Funder

the National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s00894-024-05835-1.pdf

Reference33 articles.

1. Novoselov KS, Geim AK, Morozov SV et al (2004) Electric field effect in atomically thin carbon films. Science 306(5696):666–669

2. Zhou X, Zhang Q, Gan L et al (2016) Booming development of group IV–VI semiconductors: fresh blood of 2D family. Adv Sci 3(12):1600177

3. Gong Y, Lei S, Ye G et al (2015) Two-step growth of two-dimensional WSe2/MoSe2 heterostructures. Nano Lett 15(9):6135–6141

4. Li B, Huang L, Zhong M et al (2016) Direct vapor phase growth and optoelectronic application of large band offset SnS2/MoS2 vertical bilayer heterostructures with high lattice mismatch. Adv Electron Mater 2(11):1600298

5. Xia C, Li J (2016) Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides. J Semicond 37(5):051001

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