Structural and electronic properties of a CN fullerene with N = 20, 60, 80, 180, and 240-Reference-Cited by-同舟云学术

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Structural and electronic properties of a CN fullerene with N = 20, 60, 80, 180, and 240

Published:2019-12-13 Issue:1 Volume:26 Page:
ISSN:1610-2940
Container-title:Journal of Molecular Modeling
language:en
Short-container-title:J Mol Model

Author:

Dass Devi^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Computational Theory and Mathematics,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Computer Science Applications,Catalysis

Link

http://link.springer.com/content/pdf/10.1007/s00894-019-4207-0.pdf

Reference45 articles.

1. Haddon RC, Perel AS, Morris RC, Palstra TTM, Hebard AF, Fleming RM (1995) C60 thin film transistors. Appl Phys Lett 67:121–123

2. Haddon RC (1996) C70 thin film transistors. J Am Chem Soc 118:3041–3042

3. Kobayashi S, Takenobu T, Mori S, Fujiwara A, Iwasa Y (2003) Fabrication and characterization of C60 thin-film transistors with high field-effect mobility. Appl Phys Lett 82:4581–4583

4. Kanbara T, Shibata K, Fujiki S, Kubozono Y, Kashino S, Urisu T, Sakai M, Fujiwara A, Kumashiro R, Tanigaki K (2003) N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit. Chem Phys Lett 379:223–229

5. Kobayashi S, Mori S, Iida S, Ando H, Takenobu T, Taguchi Y, Fujiwara A, Taninaka A, Shinohara H, Iwasa Y (2003) Conductivity and field effect transistor of La2@C80 metallofullerene. J Am Chem Soc 125:8116–8117

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