Evidence of positron trapping into defects in Zn-doped GaAs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/BF02903680.pdf
Reference14 articles.
1. Dupasquier A, Millsjr A P.Positron Spectroscopy of Solids. Amsterdam: IOS Press, 1995.
2. Krause-Rehberg R, Leipner H S, Kupsch A,et al. Positron Study of Defects in As-Grown and Plastically Deformed GaAs:Te.Phys Rev B, 1994,49: 2385.
3. Gebauer J, Lausmann M, Staab T E M,et al. Microscopic Identification of Native Donor Ga-Vacancy Complexes in Te-Doped GaA.Phys Rev B, 1999,60: 1464.
4. Corbel C, Stucky M, Hautojärvi P,et al. Positron Annihilation Spectroscopy of Native Vacancies in As-Grown GaAs.Phys Rev B, 1988,38: 8192.
5. Le Berre C, Corbel C, Saarinen K,et al. Evidence of Two Kinds of Acceptors in Undoped Semi-Insulating GaAs.Phys Rev B, 1995,52: 8112.
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