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Lattice imaging study of in-depth disordering of Si-implanted GaAs

  • Published:1988-07 Issue:3 Volume:46 Page:185-190
  • ISSN:0721-7250
  • Container-title:Applied Physics A Solids and Surfaces
  • language:en
  • Short-container-title:Appl. Phys. A

Author:

Vitali G.,Kalitzova M.,Pashov N.,Werner P.,Bartsch H.,Karpuzov D.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs;IEEE Transactions on Nuclear Science;2008-12

2. Lattice defects in ion implanted GaAs;Physica Status Solidi (a);1995-07-16

3. Random and channeled ion-damage distributions in Zn+implanted GaAs by electron microscopy;Radiation Effects and Defects in Solids;1994-09

4. High Voltage Transmission Electron Microscopy of Low Power Pulsed Laser Annealing of Zn+Implanted GaAs;Japanese Journal of Applied Physics;1993-06-15

5. Damage distribution in GaAs implanted at elevated temperature;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
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