Solid-phase reactions between (100) GaAs and thin-film refractory metals (Ti, Zr, V, Nb, Cr, Mo, and W)-Reference-Cited by-同舟云学术

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Solid-phase reactions between (100) GaAs and thin-film refractory metals (Ti, Zr, V, Nb, Cr, Mo, and W)

Published:1987-10 Issue:2 Volume:44 Page:177-190
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Yu K. M.,Jaklevic J. M.,Haller E. E.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00626421.pdf

Reference36 articles.

1. N. Yokoyama, T. Minura, M. Fukuta, H. Ishikawa: 1981 Int. Solid State Circuits Conf. Digest of Technical Papers (1981) p. 218

2. K. Matsumoto, N. Hashizume, H. Tanoue, T. Kanayama: Jpn. J. Appl. Phys.21, L393 (1982)

3. N. Yokoyama, T. Ohnishi, K. Odani, M. Abe: IEEE Int. Electron. Devices Meeting, Technical Digest (1981) p. 80

4. W.F. Tseng, A. Christou: IEEE Int. Electron Device Meeting, Technical Digest (1982) p. 174

5. J.K. Truman, P.H. Holloway: J. Vac. Sci. Technol. A3, 992 (1985)

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