Formation of Oxides Upon Thermal Debinding and Their Role in Obtaining Reaction-Bonded Silicon Carbide-Reference-Cited by-同舟云学术

Formation of Oxides Upon Thermal Debinding and Their Role in Obtaining Reaction-Bonded Silicon Carbide

Published:2023-07 Issue:4 Volume:96 Page:897-905
ISSN:1062-0125
Container-title:Journal of Engineering Physics and Thermophysics
language:en
Short-container-title:J Eng Phys Thermophy

Author:

Grinchuk P. S.,Kiyashko M. V.,Stepkin M. O.,Akulich A. V.,Solovei D. V.,Danilova-Tret’yak S. M.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,Condensed Matter Physics

Link

https://link.springer.com/content/pdf/10.1007/s10891-023-02751-8.pdf

Reference12 articles.

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4. P. S. Grinchuk, M. V. Kiyashko, H. M. Abuhimd, M. S. Alshahrani, M. O. Stepkin, V. V. Toropov, A. A. Khort, D. V. Solovei, A. V. Akulich, M. D. Shashkov, and M. Yu. Liakh, Effect of technological parameters on densification of reaction bonded Si/SiC ceramics, J. Eur. Ceram. Soc., 38, 4815–4823 (2018).

5. P. S. Grinchuk, M. V. Kiyashko, H. M. Abuhimd, M. S. Alshahrani, D. V. Solovei, M. O. Stepkin, A. V. Akulich, M. D. Shashkov, T. A. Kuznetsova, S. M. Danilova-Tretiak, L. E. Evseeva, and K. V. Nikolaeva, Advanced technology for fabrication of reaction-bonded SiC with controlled composition and properties, J. Eur. Ceram. Soc., 41, 5813–5824 (2021).

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