Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement-Reference-Cited by-同舟云学术

Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement

Published:2016-03 Issue:2 Volume:89 Page:514-517
ISSN:1062-0125
Container-title:Journal of Engineering Physics and Thermophysics
language:en
Short-container-title:J Eng Phys Thermophy

Author:

Karimov A. V.,Dzhuraev D. P.,Kuliev Sh. M.,Turaev A. A.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,Condensed Matter Physics

Link

http://link.springer.com/content/pdf/10.1007/s10891-016-1404-x.pdf

Reference6 articles.

1. G. Ya. Zelenov, Temperature measurement by the p–n junction, Sovr. Élektron., No. 2, 38–39 (2007).

2. S. F. Kurashkin, Application of a semiconductor diode as a measuring temperature transducer, Tr. Tavrich. Gos. Agrotekhnol. Univ., 3, No. 11, 173–178 (2001).

3. V. Gromov, Multifunctional transducer for electronic systems of data acquisition, Élektron., Nauka, Tekhnol., Biznes, No. 5, 96–101 (2006).

4. O. A. Abdulkhaev, D. M. Edgorova, A. V. Karimov, B. M. Kamanov, and A. A. Turaev, Features of the temperature properties of a field-effect transistor in a current-limiting mode, J. Eng. Phys. Thermophys., 86, Issue 1, 248–254 (2013).

5. S. M. Sze and K. Ng. Kwok, Physics of Semiconductor Devices, 3rd edn., Wiley-Interscience, Hoboken, New Jersey (2007).

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