Fine structures of residual strain distribution in Fe-Doped lnP-100) wafers grown by the LEC and VCZ methods-Reference-Cited by-同舟云学术

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Fine structures of residual strain distribution in Fe-Doped lnP-100) wafers grown by the LEC and VCZ methods

Published:1996-03 Issue:3 Volume:25 Page:337-342
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Fukuzawa Masayuki,Yamada Masayoshi

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02666598.pdf

Reference11 articles.

1. J. Völkl and G. Müller,E-MRS Mtg. 16, 141 (1987).

2. G. Müller,E-MRS Mtg. 16,117 (1987).

3. R. Hirano, T. Kanazawa, Y. Itoh, T. Itokawa, H. Onodera and M. Nakamura,Proc. 5th Intl. Conf. on InP and Related Materials, Paris, 648 (New York: IEEE, 1993), #93CH3276-3.

4. M. Yamada,Rev. Sci. Instrum. 64, 1815 (1993).

5. M. Yamada, M. Fukuzawa, Y. Yabuhara and M. Yokogawa,Proc. 5th Intl. Conf. on InP and Related Materials, Paris, 69 (New York: IEEE, 1993), #93CH3276-3.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared grey-field polariscope: A tool for rapid stress analysis in microelectronic materials and devices;Review of Scientific Instruments;2005-04

2. Residual Strain in Semi-Insulating InP Wafers Treated by Multiple-Step Wafer Annealing;Japanese Journal of Applied Physics;1999-02-28

3. Reciprocal space mapping for semiconductor substrates and device heterostructures;Il Nuovo Cimento D;1997-02

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