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Annealing behaviour of high-dose-implanted nitrogen in InP

  • Published:1996-05 Issue:5 Volume:62 Page:463-468
  • ISSN:0947-8396
  • Container-title:Applied Physics A Materials Science and Processing
  • language:en
  • Short-container-title:Appl. Phys. A

Author:

Likonen J.,Väkeväinen K.,Ahlgren T.,Räisänen J.,Rauhala E.,Keinonen J.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nano-scale depth-varying recrystallization of oblique Ar+ sputtered Si(111) layers;Scientific Reports;2020-07-17

2. High energy oxygen irradiation-induced defects in Fe-doped semi-insulating indium phosphide by positron annihilation technique;International Journal of Modern Physics B;2017-02-06

3. Study of Ion-implanted InSb1-xNx Alloys using Secondary Ion Mass Spectroscopy;2007 IEEE Conference on Electron Devices and Solid-State Circuits;2007

4. Annealing behaviour and ranges of implanted ions in III–V and II–VI compound semiconductor materials;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03

5. Defect formation and annealing behavior of InP implanted by low-energy 15N ions;Journal of Applied Physics;1998-01-15
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