Outgassing analysis of molecular glass photoresists under EUV irradiation-Reference-Cited by-同舟云学术

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Outgassing analysis of molecular glass photoresists under EUV irradiation

Published:2014-06-13 Issue:12 Volume:57 Page:1746-1750
ISSN:1674-7291
Container-title:Science China Chemistry
language:en
Short-container-title:Sci. China Chem.

Author:

Chen Li,Xu Jian,Yuan Hua,Yang ShuMin,Wang LianSheng,Wu YanQing,Zhao Jun,Chen Ming,Liu HaiGang,Li ShaYu,Tai RenZhong,Wang ShuangQing,Yang GuoQiang

Publisher

Springer Science and Business Media LLC

Subject

General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s11426-014-5122-y.pdf

Reference19 articles.

1. O’Sullivan G, Kilbane D, D’Arcy R. Recent progress in source development for extreme UV lithography. J Mod Opt, 2012, 59: 855–872

2. Kinoshita H, Watanabe T, Harada T, Nagata Y. Recent activities on extreme ultraviolet lithography in NewSUBARU. Jpn J Appl Phys, 2013, 52: 06GA01

3. Hyun Y, Seo K, Kim K, Lee I, Lee B, Koo S, Lee J, Kim S, Kim S, Kim M, Kang H. EUV mask defect analysis from mask to wafer printing. Proc SPIE, 2013, 8679: 86790G

4. Wu B, Kumar A. Extreme ultraviolet lithography: a review. J Vac Technol B, 2007, 25: 1743–1761

5. Gallatin GM, Naulleau P, Brainard R. Fundamental limits to EUV photoresist. Proc SPIE, 2007, 6519: 651911

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4. Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography;ACS Omega;2022-08-12

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