On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/s13538-016-0484-6.pdf
Reference19 articles.
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2. P.I. Widenborg, A.G. Aberle. Thick poly-Si films fabricated by the aluminium-induced crystallization bilayer process on glass substrates. Conference Record of the IEEE Photovoltaic Specialists Conference. 1206–1209 (2002). doi: 10.1109/pvsc.2002.1190824
3. S. He, J. Janssens, J. Wong, et al., The influence of base doping density on the performance of evaporated poly-Si thin-film solar cells by solid-phase epitaxy. Thin Solid Films 519, 475–478 (2010)
4. P. Prathap, O. Tuzun, D. Madi, et al., Thin film silicon solar cells by AIC on foreign substrates. Sol. Energy Mater. Sol. Cells 95, 44–52 (2011)
5. J. Schneider, J. Klein, M. Muske, et al., Aluminum-induced crystallization of amorphous silicon: preparation effect on growth kinetics. J. Non-Cryst. Solids 338, 127–130 (2004)
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