Theoretical study of built-in-polarization effect on relaxation time and mean free path of phonons in Al x Ga1−x N alloy-Reference-Cited by-同舟云学术

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Theoretical study of built-in-polarization effect on relaxation time and mean free path of phonons in Al x Ga1−x N alloy

Published:2016-12 Issue:7 Volume:39 Page:1835-1841
ISSN:0250-4707
Container-title:Bulletin of Materials Science
language:en
Short-container-title:Bull Mater Sci

Author:

SAHOO B K,PANSARI A

Publisher

Springer Science and Business Media LLC

Subject

Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s12034-016-1319-3.pdf

Reference32 articles.

1. Morkoc H 2013 Nitride semiconductor devices (Weinheim, Germany: Wiley-VCH Verlag GmbH & Co.)

2. Lopuszy M and Majewski J A 2012 J. Appl. Phys. 111 033502

3. Morkoc H 2008 Handbook of nitride semiconductors and devices (Weinheim, Germany: Wiley-VCH Verlag GmbH & Co.)

4. Piprek J 2007 Nitride semiconductor devices: principles and simulation (Weinheim, Germany: Wiley-VCH Verlag GmbH & Co.)

5. Schubert E F 2006 Light emitting diodes (New York: Cambridge University Press)

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