Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II–VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic-Reference-Cited by-同舟云学术

Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II–VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic

Published:2015-05-21 Issue:9 Volume:44 Page:3108-3115
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Jain F.,Chan P.-Y.,Lingalugari M.,Kondo J.,Suarez E.,Gogna P.,Chandy J.,Heller E.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-015-3827-0.pdf

Reference20 articles.

1. F.C. Jain, B. Miller, E. Suarez, P.-Y. Chan, S. Karmakar, F. Al-Amoody, M. Gogna, J. Chandy, and E. Heller, J. Electronic Materials 40, 1717 (2011).

2. F. Jain and E. Heller, US Patent# 8,294,137 (23 October 2012).

3. F.C. Jain, J. Chandy, B. Miller, E.-S. Hasaneen, and E. Heller, Int. J. High Speed Electron. Syst. 20, 641 (2011).

4. P. Gogna, E. Suarez, M. Lingalugari, J. Chandy, E. Heller, E.-S. Hasaneen, and F.C. Jain, J. Electron. Mater. 42, 3337 (2013).

5. P. Gogna, M. Lingalugari, J. Chandy, F.C. Jain, E. Heller, and E.-S. Hasaneen, Efficient multi-bit SRAMs using spatial wavefunction switched (SWS)-FETs, IEEE conference proceedings of Lester Eastman Conference on High Performance Devices (LEC) (Providence, RI: Brown University, 2012).

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