Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators-Reference-Cited by-同舟云学术

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators

Published:2010-04-14 Issue:7 Volume:39 Page:903-907
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Suarez E.,Gogna M.,Al-Amoody F.,Karmakar S.,Ayers J.,Heller E.,Jain F.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-010-1207-3.pdf

Reference10 articles.

1. F.C. Jain, E. Suarez, M. Gogna, F. Alamoody, D. Butkiewicus, R. Hohner, T. Liaskas, S. Karmakar, P.-Y. Chan, B. Miller, J. Chandy, and E. Heller, J. Cryst. Growth 38, 1574 (2009).

2. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, IEDM, 521 (1995).

3. R. Velampati and F.C. Jain, NSTI Nanotech (CA: Santa Clara, 2007).

4. F. Al-amoody, E. Suarez, A. Rodriguez, E. Heller, J. Ayers, and F. Jain, Nanoelectronic Devices for Defense and Security Conference (Ft. Lauderdale, FL, 2009).

5. E. Hasaneen, E. Heller, R. Bansal, and F. Jain, Solid State Electron. 48, 2055 (2004).

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