Compositional changes in erbium-implanted GaN films due to annealing-Reference-Cited by-同舟云学术

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Compositional changes in erbium-implanted GaN films due to annealing

Published:2003-05 Issue:5 Volume:32 Page:382-387
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Zavada J. M.,Wilson R. G.,Hömmerich U.,Thaik M.,Seo J. T.,Ellis C. J.,Lin J. Y.,Jiang H. X.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-003-0162-7.pdf

Reference14 articles.

1. S.J. Pearton, Mater. Sci. Rep. 4, 313 (1990).

2. J.M. Zavada and D. Zhang, Solid State Electron. 38, 1285 (1995).

3. G.S. Pomerenke, P.B. Klein, and D.W. Langer, eds., Rare Earth Doped Semiconductors I (Pittsburgh, PA: Materials Research Society, 1993).

4. S. Coffa, A. Polman, and R.N. Schwartz, eds., Rare Earth Doped Semiconductors II (Pittsburgh, PA: Materials Research Society, 1996).

5. J. Zavada, T. Gregorkiewicz, and A.J. Steckl, eds., Rare Earth Doped Semiconductors III (Amsterdam, Elsevier, 2001).

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