Observation on Defects in Poly-Si Films Prepared by RTCVD Under Nonideal Conditions-Reference-Cited by-同舟云学术

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Observation on Defects in Poly-Si Films Prepared by RTCVD Under Nonideal Conditions

Published:2010-03-18 Issue:6 Volume:39 Page:732-737
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Ai Bin,Shen Hui,Deng You-Jun,Liu Chao,Liang Xue-Qin

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-010-1145-0.pdf

Reference15 articles.

1. B. Ai, H. Shen, Z.-C. Liang, Z. Chen, G.-L. Kong, and X.-B. Liao, J. Cryst. Growth 276, 83 (2005).

2. B. Ai, H. Shen, Q. Ban, Z.-C. Liang, R.-L. Chen, Z.-R. Shi, and X.-B. Liao, Sci. China Ser. E 48, 41 (2005).

3. A. Focsa, I. Gordon, J.M. Auger, A. Slaoui, G. Beaucarne, J. Poortmans, and C. Maurice, Renew. Energy 33, 267 (2008).

4. I. Gordon, L. Carnel, D. Van Gestel, G. Beaucarne, and J. Poortmans, Prog. Photovolt. 15, 575 (2007).

5. A. Focsa, A. Slaoui, and E. Pihan, Thin Solid Films 511–512, 404 (2006).

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1. APCVD Deposition of Si Film on SiO₂ Patterned Si (111) Substrates for Solar Cells;Advanced Materials Research;2011-07

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