Analytical Modeling of ZrO2, HfO2 and SiO2 Effect over Tunneling Field Effect Transistor-Reference-Cited by-同舟云学术

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Analytical Modeling of ZrO2, HfO2 and SiO2 Effect over Tunneling Field Effect Transistor

Published:2019-11-27 Issue:2 Volume:49 Page:1467-1472
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Kamali Moghaddam Mohammad,Moslemi Mohammad,Farzaneh Mojtaba

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-019-07789-0.pdf

Reference22 articles.

1. W.Y. Choi, B.G. Park, J.D. Lee, and T.J.K. Liu, IEEE Electron. Dev. Lett. 28, 743 (2007).

2. Q. Zhang, W. Zhao, and A. Seabaugh, IEEE Electron. Dev. Lett. 27, 297 (2006).

3. V. Nagavarapu, R. Jhaveri, and J.C.S. Woo, IEEE Trans. Electron. Dev. 55, 1013 (2008).

4. A.S. Verhulst, D. Leonelli, R. Rooyackers, and G. Groeseneken, Appl. Phys. 110, 024510 (2011).

5. P. Amiri, A. Hedayatipour, and S. Aslanzadeh, JIAEEE 14, 107 (2017).

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