Work Function Tuning and Doping Optimization of 22-nm HKMG Raised SiGe/SiC Source

Work Function Tuning and Doping Optimization of 22-nm HKMG Raised SiGe/SiC Source–Drain FinFETs

Published:2017-01-04 Issue:3 Volume:46 Page:1567-1575
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Rezali F. A. Md,Rasid M. A. S. Abd,Othman N. A. F.,Hatta S. Wan Muhamad^ORCID,Soin N.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-016-5199-5.pdf

Reference24 articles.

1. International Technology Roadmap for Semiconductors (ITRS, 2014). http://www.itrs2.net/ . Accessed 15 May 2016.

2. K. Roy, S. Mukhopadhyay, and H. Mahmoodi-Meimand, Proc. IEEE 91, 305 (2003).

3. H. Hussin, N. Soin, M.F. Bukhori, S.W.M. Hatta, and Y.A. Wahab, Sci. World J. 2014, 1 (2014).

4. C. Auth, C. Allen, A. Blattner, D. Bergstrom, M. Brazier, M. Bost, M. Buehler, V. Chikarmane, T. Ghani, T. Glassman, R. Grover, W. Han, D. Hanken, M. Hattendorf, P. Hentges, R. Heussner, J. Hicks, D. Ingerly, P. Jain, S. Jaloviar, R. James, D. Jones, J. Jopling, S. Joshi, C. Kenyon, H. Liu, R. McFadden, B. McIntyre, J. Neirynck, C. Parker, L. Pipes, I. Post, S. Pradhan, M. Prince, S. Ramey, T. Reynolds, J. Roesler, J. Sandford, J. Seiple, P. Smith, C. Thomas, D. Towner, T. Troeger, C. Weber, P. Yashar, K. Zawadzki, and K. Mistry, in Symposium on VLSI Technology (2012), p. 131.

5. Y. Song, H. Zhou, Q. Xu, J. Luo, H. Yin, J. Yan, and H. Zhong, J. Electron. Mater. 40, 1584 (2011).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGe x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering;Journal of Electronic Materials;2018-01-16

2. Optimization of 7 nm Strained Germanium FinFET Design Parameters Using Taguchi Method and Pareto Analysis of Variance;ECS Journal of Solid State Science and Technology;2018

3. Optimization of Graded AlInN/AlN/GaN HEMT Device Performance Based on Quaternary Back Barrier for High Power Application;ECS Journal of Solid State Science and Technology;2017