Processing and characterization of a-Si:H photoresists for a vacuum-compatible photolithography process-Reference-Cited by-同舟云学术

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Processing and characterization of a-Si:H photoresists for a vacuum-compatible photolithography process

Published:2004-06 Issue:6 Volume:33 Page:538-542
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Jacobs R. N.,Stoltz A. J.,Robinson E. W.,Boyd P. R.,Almeida L. A.,Dinan J. H.,Salamanca-Riba L.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-004-0043-8.pdf

Reference16 articles.

1. R.E. Hollingsworth, C. Dehart, L. Wang, J.N. Johnson, J.D. Benson, and J.H. Dinan, J. Electron. Mater. 27, 689 (1998).

2. M. Mullenborn, K. Birkelund, F. Grey, and S. Madsen, Appl. Phys. Lett. 69, 3013 (1996).

3. N. Kramer, M. Niesten, and C. Schonenberger, Appl. Phys. Lett. 67, 2989 (1995).

4. K. Shiralagi and R. Tsui, Appl. Phys. Lett. 74, 886 (1999).

5. J.C. Knights, R.A. Lujan, P. Rosenblum, R.A. Street, D.K. Bieglesen, and J.A. Reimer, Appl. Phys. Lett. 38, 331 (1981).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of a-Si:H resist vacuum-lithography processing on HgCdTe;Journal of Electronic Materials;2006-06

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