Comparison of Electroless Ni-P and Co-W-P Diffusion Properties Against GaAs Substrate-Reference-Cited by-同舟云学术

Comparison of Electroless Ni-P and Co-W-P Diffusion Properties Against GaAs Substrate

Published:2023-04-10 Issue:6 Volume:52 Page:4080-4090
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:J. Electron. Mater.

Author:

Nishizawa Koichiro^ORCID,Matsumoto Ayumu^ORCID,Nakagawa Yasuyuki,Sakuma Hitoshi,Goto Seiki,Fukumuro Naoki^ORCID,Yae Shinji^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11664-023-10380-3.pdf

Reference25 articles.

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3. T. Edwards, Foundations for Microstrip Circuit Design, 2nd ed. (Hoboken: Wiley, 1992).

4. T. Daly, J. Fender, B. Duffin, and M. Kottke, Optimization of metal adhesion for GaAs backside wafer processing, in International Conference on Compound Semiconductor Digest (2003).

5. C.-Y. Chen, E.Y. Chang, L. Chang, and S.-H. Chen, Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier. IEEE Trans. Electron Devices 48, 1033 (2001).

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