Effects of Rapid Thermal Annealing on Electrical Transport in Heavily Doped ZnO Thin Films Deposited at Different Substrate Temperatures-Reference-Cited by-同舟云学术

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Effects of Rapid Thermal Annealing on Electrical Transport in Heavily Doped ZnO Thin Films Deposited at Different Substrate Temperatures

Published:2014-07-22 Issue:11 Volume:43 Page:3973-3978
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Zhu Ke,Yang Ye,Huang Jinhua,Lu Yuehui,Li Jia,Tan Ruiqin,Cui Ping,Song Weijie

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-014-3254-7.pdf

Reference20 articles.

1. C. Agashe, O. Kluth, J. Hupkes, U. Zastrow, B. Rech, and M. Wuttig, J. Appl. Phys. 95, 1911 (2004).

2. L. Raniero, I. Ferreira, A. Pimentel, A. Goncalves, P. Canhola, E. Fortunato, and R. Martins, Thin Solid Films 511, 295 (2006).

3. S. Kim, W.I. Lee, E.H. Lee, S.K. Hwang, and C. Lee, J. Mater. Sci. 42, 4845 (2007).

4. C. Periasamy and P. Chakrabarti, J. Electron. Mater. 40, 259 (2011).

5. S. Calnan and A. Tiwari, Thin Solid Films 518, 1839 (2010).

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1. Low indium content In–Zn–O system towards transparent conductive films: structure, properties and comparison with AZO and GZO;Journal of Materials Science: Materials in Electronics;2017-05-30

2. Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology;Surfaces and Interfaces;2016-10

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