Two-Dimensional Potential and Threshold Voltage Modeling of Work Function Engineered Double Gate High-k Gate Stack Schottky Barrier MOSFET-Reference-Cited by-同舟云学术

Two-Dimensional Potential and Threshold Voltage Modeling of Work Function Engineered Double Gate High-k Gate Stack Schottky Barrier MOSFET

Published:2019-03-22 Issue:6 Volume:48 Page:3823-3832
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Saha Priyanka^ORCID,Sarkhel Saheli,Sarkar Subir Kumar

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-019-07133-6.pdf

Reference44 articles.

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