Heterogeneous silicon integration by ultra-high vacuum wafer bonding-Reference-Cited by-同舟云学术

Heterogeneous silicon integration by ultra-high vacuum wafer bonding

Published:2003-08 Issue:8 Volume:32 Page:849-854
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Kim M. J.,Carpenter R. W.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-003-0199-7.pdf

Reference18 articles.

1. Q.-Y. Tong and U. Gosele, Semiconductor Wafer Bonding: Science and Technology (New York: John Wiley & Sons, 1999), pp. 233–288.

2. D. Matthiesen, N. Newman, D. Norton, and D. Schlom, eds., Substrate Engineering—Paving the Way to Epitaxy, Materials Research Society Symposia, Vol. 587 (Pittsburgh, PA: MRS, 2000), pp. 1–228.

3. M.J. Kim, R.W. Carpenter, M.J. Cox, and J. Xu, J. Mater. Res. 15, 1008 (2000).

4. N.J. Zaluzec, B.J. Kestel, and D. Henriks, Microsc. Microanal. 3, 983 (1997).

5. M.J. Kim and R.W. Carpenter, J. Mater. Res. 5, 347 (1990).

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