Author:
Qin G.,Kong J. C.,Yang J.,Ren Y.,Li Y. H.,Yang C. Z.,Li H. F.,Wang J. Y.,Yu J. Y.,Qin Q.,Zhao J.,Zhao P.
Funder
National Key Research and Development Program of China
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. C. Junhao, Narrow-Gap Semiconductor Physics (Beijing: Science Press, 2005).
2. Y. Jianrong, Physics and Technology of HgCdTe Materials (Beijing: National Defense Industry Press, 2012).
3. A. Rogalski, J. Antoszewski, and L. Faraone, Third-generation infrared photodetector arrays. J. Appl. Phys. 105(9), 4 (2009).
4. A. Rogalski, New material systems for third generation infrared detectors, in Ninth International Conference on Correlation Optics, SPIE, 7388, 178-189 (2009).
5. P.S. Wijewarnasuriya, P.Y. Emelie, A. D’Souza, G. Brill, M.G. Stapelbroek, S. Velicu, Y. Chen, C. Grein, S. Sivananthan, and N.K. Dhar, Nonequilibrium operation of arsenic diffused long-wavelength infrared HgCdTe photodiodes. J. Electron. Mater. 37(9), 1283–1290 (2008).
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