Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)-Reference-Cited by-同舟云学术

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Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

Published:2016-11-01 Issue:2 Volume:46 Page:1061-1066
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Jum’h I.,Abd El-Sadek M. S.,Al-Taani H.,Yahia I. S.,Karczewski G.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-016-5071-7.pdf

Reference24 articles.

1. S. Nehra and M. Singh, J. Alloys Compd. 488, 356 (2009).

2. A. Alsaad, Phys. B 405, 951 (2010).

3. S. Mecabih, K. Benguerine, N. Benosman, B. Abbar, and B. Bouhafs, Phys. B 403, 3452 (2008).

4. R.R. Galazka, S. Nagata, and P.H. Keesom, Phys. Rev. B 22, 3344 (1980).

5. M. Prakasam, O. Viraphong, L. Teule-Gay, R. Decourt, P. Veber, E.G. Vıllora, and K. Shimamura, J. Cryst. Growth 318, 533 (2011).

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