Extraction of SiO2/SiC interface trap profile in 4H- and 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C-Reference-Cited by-同舟云学术

Extraction of SiO2/SiC interface trap profile in 4H- and 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C

Published:2006-04 Issue:4 Volume:35 Page:618-624
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Deng Yanqing,Wang Wei,Fang Qizhi,Koushik Mahalingam B.,Chow T. Paul

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-006-0109-x.pdf

Reference19 articles.

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4. J.J. Sumakeris, J.R. Jenny, and A.R. Powell, Mater. Res. Soc. Bull. 30, 280 (2005).

5. T.P. Chow, Y. Tang, L. Zhu, P. Losee, and S. Balachandran (Paper presented at 5th Int. AECV Conf. Proc., Angers, France, June 2, 2003).

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