MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry-Reference-Cited by-同舟云学术

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MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry

Published:2012-08-08 Issue:10 Volume:41 Page:2700-2706
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Aqariden F.,Elsworth J.,Zhao J.,Grein C.H.,Sivananthan S.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-012-2189-0.pdf

Reference5 articles.

1. M.A. Kinch, Proc. SPIE Meeting 4369, 66 (2001).

2. L. Colombo, G.H. Westpal, P.K. Liao, M.C. Chen, and H.F. Schaake, Proc. SPIE Meeting 1683, 33 (1992).

3. P.W. Norton, P. LoVecchio, G.N. Pultz, J Hughes, T. Robertson, V. Lukach, and K. Wong. Proc. SPIE Meeting 2228, 73 (1994).

4. F. Aqariden, P.D. Dreiske, M.A. Kinch, P.K. Liao, T. Murphy, H.F. Schaake, T.A. Shafer, H.D. Shih, and T.H. Teherani, J. Electron. Mater. 36, 900 (2007).

5. P.D. Dreiske, Proc. SPIE Meeting 5783, 25 (2005).

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