Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique-Reference-Cited by-同舟云学术

Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique

Published:2007-04-25 Issue:8 Volume:36 Page:864-870
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Hails Janet E.,Keir Andrew M.,Graham Andrew,Williams Gerald M.,Giess Jean

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-007-0113-9.pdf

Reference21 articles.

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3. S.J.C. Irvine, J. Tunnicliffe, J.B. Mullin, Mater. Lett. 2, 305 (1984).

4. C.D. Maxey, J.P. Camplin, I.T. Guilfoy, J. Gardner, R.A. Lockett, C.L. Jones, P. Capper, M. Houlton, N.T. Gordon, J. Electron. Mater. 32, 62 (2003)

5. J. Tunnicliffe, S.J.C. Irvine, O.D. Dosser, J.B. Mullin, J. Cryst. Growth 68, 245 (1984)

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