Author:
Chen Shanxiong,Wang Jiong,Yu Shangzhao,Hu Biao,Wu Qing,Du Yong
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference98 articles.
1. H.-Y. Cheng, F. Carta, W.-C. Chien, H.-L. Lung, and M.J. BrightSky, 3D cross-point phase-change memory for storage-class memory. J. Phys. D-Appl. Phys. 52, 473002 (2019).
2. W. Chien, C. Yeh, R.L. Bruce, H. Cheng, I.T. Kuo, C. Yang, A. Ray, H. Miyazoe, W. Kim, F. Carta, E. Lai, M.J. BrightSky, and H.S. Lung, A study on OTS-PCM pillar cell for 3-D stackable memory. IEEE Trans. Electron Devices 65, 5172 (2018).
3. S. Yasuda, K. Ohba, T. Mizuguchi, H. Sei, M. Shimuta, K. Aratani, T. Shiimoto, T. Yamamoto, T. Sone, S. Nonoguchi, J. Okuno, A. Kouchiyama, W. Otsuka, and K. Tsutsui, in 2017 Symposium on VLSI Technology (2017), p. 30
4. Y. Zheng, Y. Cheng, M. Zhu, X. Ji, Q. Wang, S. Song, Z. Song, W. Liu, and S. Feng, A candidate Zr-doped Sb2Te alloy for phase change memory application. Appl. Phys. Lett. 108, 052107 (2016).
5. J. Wang, D. Cui, Y. Kong, and L. Shen, Unusual force constants guided distortion-triggered loss of long-range order in phase change materials. Materials 14, 3514 (2021).
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