An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters-Reference-Cited by-同舟云学术

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An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters

Published:2010-12-10 Issue:4 Volume:40 Page:362-368
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Di Lecce Valerio,Esposto Michele,Bonaiuti Matteo,Fantini Fausto,Meneghesso Gaudenzio,Zanoni Enrico,Chini Alessandro

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-010-1434-7.pdf

Reference13 articles.

1. M. Faqir, G. Verzellesi, G. Meneghesso, E. Zanoni, and F. Fantini, IEEE Trans. Electron. Dev. 55, 1592 (2008).

2. M. Faqir, G. Verzellesi, A. Chini, F. Fantini, F. Danesin, G. Meneghesso, E. Zanoni, and C. Dua, IEEE Trans. Dev. Mater. Reliab. 8, 240 (2008).

3. U.K. Mishra, L. Shen, T.E. Kazior, and Y.-F. Wu, P. IEEE 96, 287 (2008).

4. H. Kim, R.M. Thompson, V. Tilak, T.R. Prunty, J.R. Shealy, and L.F. Eastman, IEEE Electron. Dev. Lett. 24, 421 (2003).

5. H. Xing, Y. Dora, A. Chini, S. Heikman, S. Keller, and U.K. Mishra, IEEE Electron. Dev. Lett. 25, 161 (2004).

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