1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70-Reference-Cited by-同舟云学术

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Published:2007-11-08 Issue:5 Volume:37 Page:662-665
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Jonas Charlotte,Capell Craig,Burk Al,Zhang Qingchun,Callanan Robert,Agarwal Anant,Geil Bruce,Scozzie Charles

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-007-0331-1.pdf

Reference6 articles.

1. S. Ryu, A.K. Agarwal, R. Singh, J.W. Palmour, IEEE Electr. Device L. 22(3), 124 (2001)

2. A.K. Agarwal, S. Ryu, J. Richmond, C. Capell, J.W. Palmour, Y. Tang, S. Balachandran, and T.P. Chow, P IEEE ISPSD, Cambridge, UK, p. 135 (2003)

3. S. Balachandran, T.P. Chow, A. Agarwal, C. Scozzie, and K.A. Jones, P ISPSD, p. 291 (2005)

4. A.K. Agarwal, S. Krishnaswami, J. Richmond, C. Capell, S.-H. Ryu, J. Palmour, S. Balachandran, T.P. Chow, S. Bayne, B. Geil, and C. Scozzie, P ISPSD, p. 271 (2005)

5. C.F. Huang, J.A. Cooper, IEEE Trans. Electron. Dev. 24(6), 396 (2003)

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