Numerical Study of Sub-10 nm Tunneling Field Effect Transistors Performance Based on Graphene Nanoribbons in Conventional Very Large-Scale Integrated Circuits-Reference-Cited by-同舟云学术

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Numerical Study of Sub-10 nm Tunneling Field Effect Transistors Performance Based on Graphene Nanoribbons in Conventional Very Large-Scale Integrated Circuits

Published:2019-07-03 Issue:9 Volume:48 Page:5617-5623
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Bakhshandeh A.^ORCID,Hosseini S. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-019-07397-y.pdf

Reference14 articles.

1. S. Chilstedt, C. Dong, and D. Chen, Transistors: Types, Materials and Applications, ed. B.M. Fitzgerald (Nova Science Publishers, Inc., 2010), pp. 1–34.

2. P.J. Wessely, F. Wessely, E. Birinci, U. Schwalke, and B. Riedinger, J. Vac Sci. Technol. B Nanotechnol. Microelectron. Mater. Process. Meas. Phenom. 30, 03D114 (2012).

3. I. Liberal and N. Engheta, Nat. Photon. 11, 149 (2017).

4. L. La Spada and L. Vegni, Materials 11, 603 (2018).

5. U.K. Chettiar and N. Engheta, Phys. Rev. B 92, 165413 (2015).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Initial Grain Size and Laser Parameters on HfO2 Nanoparticles Prepared Using Femtosecond Laser Ablation in Liquids;Journal of Electronic Materials;2021-01-05

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