Existence of Partially Degenerate Electrical Transport in Intermetallic Cu2SnSe3 Thermoelectric System Sintered at Different Temperatures
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Published:2021-10-22
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Volume:
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ISSN:1598-9623
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Container-title:Metals and Materials International
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language:en
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Short-container-title:Met. Mater. Int.
Author:
Gurukrishna K., Nikhita H. R., Swamy S. M. Mallikarjuna, Rao AshokORCID
Abstract
AbstractA detailed investigation on the temperature dependent electrical properties of Cu2SnSe3 system, synthesized via conventional solid-state reaction at different sintering temperatures are presented in this communication. All the samples exhibit degenerate semiconducting nature at low temperatures. The existence of small polarons and hence electron–phonon interactions are confirmed at temperatures below 400 K. A transition was observed from degenerate to non-degenerate semiconducting behaviour at high temperatures (T > 400 K). The study confirms the unusual transition in electrical resistivity as well as thermopower at high temperatures in all the compounds, demonstrating the existence of minority carrier excitation along with temperature-triggered ionisation of the defects. The transport behaviour is further supported by an upward movement of Fermi level away from the valence band. Highest weighted mobility of 8.2 cm2 V−1 s−1 at 673 K was obtained for the sample sintered at 1073 K. A considerable decrease in electrical resistivity with increase in temperature (T > 400 K) has driven the power factor to increase exponentially, thereby achieving highest value of 188 µV/mK2 (at 673 K) for the sample sintered at 673 K.
Graphic abstract
Funder
Department of Science and Technology, Ministry of Science and Technology Council of Scientific and Industrial Research, India Manipal Academy of Higher Education, Manipal
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Mechanics of Materials,Condensed Matter Physics
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