Comparison of radiation damage in silicon detectors induced by pions, protons and neutrons-Reference-Cited by-同舟云学术

Comparison of radiation damage in silicon detectors induced by pions, protons and neutrons

Published:1996-09 Issue:9 Volume:109 Page:1351-1358
ISSN:0369-3546
Container-title:Il Nuovo Cimento A
language:en
Short-container-title:Nuov Cim A

Author:

Biggeri U.,Borchi E.,Bruzzi M.,Candelori A.,Giraldo A.

Publisher

Springer Science and Business Media LLC

Subject

General Medicine

Link

http://link.springer.com/content/pdf/10.1007/BF02773521.pdf

Reference22 articles.

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4. Biggeri U., Borchi E., Bruzzi M., Lazanu S. andLi Z.,Type inversion measurements in irradiated silicon by means of Hall effect, presented at theConference on large Scale Applications and Radiation Hardness of Semiconductor Detectors, edited byA. Baldini andE. Focardi, Vol.46 (SIF, Bologna) 1994, pp. 115–121.

5. Chilingarov A et al., Nucl. Instrum. Methods A,360 (1995) 342.

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