1. GOST 20398.7–74, Field-Effect Transistors. Methods for Measurement of the Electrical Parameters.
2. GOST 18604.24–81, High-Frequency Bipolar Transistors. Methods for Measurement of the Output Power, Power Gain, and Efficiency of a Collector.
3. A. A. Afonskii and V. P. D’yakonov, Electronic Measurements in Nanotechnologies and Microelectronics, DMK Press, Moscow (2011).
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5. K. O. Petrosyants and I. A. Kharitonov, “Models of metal-oxide-semiconductor and bipolar transistors for circuitry calculations of large integrated circuits in light of radiation effects,” Mikroelectronika, 23, Iss. 1, 21–32 (1994).