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Silicon-germanium alloy growth control and characterization

  • Published:1982-07 Issue:4 Volume:11 Page:779-793
  • ISSN:0361-5235
  • Container-title:Journal of Electronic Materials
  • language:en
  • Short-container-title:JEM

Author:

Halberg Leslie I.,Nevin Joseph H.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of Semiconductor Materials;Physical Chemistry of Semiconductor Materials and Processes;2015-08-07

2. Growth ripples upon strained SiGe epitaxial layers on Si and misfit dislocation interactions;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07

3. The characteristics of strain-modulated surface undulations formed upon epitaxial Si1−xGex alloy layers on Si;Journal of Crystal Growth;1992-10

4. Surface Waves and Strain Modulations in Si1-xGex Alloy Layers on Si;MRS Proceedings;1992

5. Growth interfaces of Si1−xGex/Si heterostructures studied by in situ laser light scattering;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-07
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