Characterization of semiconductor devices by infrared laser interferometry
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Link
http://link.springer.com/content/pdf/10.1007/BF03159611.pdf
Reference36 articles.
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3. Said, R. A., Bridges, G. E., Thomson, D. J.: Noninvasive scanned probe potentiometry for integrated circuit diagnostics. IEEE Trans. Instr. Meas. 43 (1994), No. 3, pp. 469–474.
4. Lai, J., Chandrachood, M., Majumdar, A., Carrejo, J. P.: Thermal detection of device failure by atomic force microscopy. IEEE Electron Device Lett. 16 (1995), No. 7, pp. 312–315.
5. Varesi, J., Majumdar, A.: Scanning Joule expansion microscopy at nanometer scales. Appl. Phys. Lett. 72 (1998), No. 11, pp. 37–39.
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